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NTR3161N Power MOSFET
20 V, 3.3 A, Single N-Channel, SOT-23
Features
* * * * *
Low RDS(on) Low Gate Charge Low Threshold Voltage Halide-Free This is a Pb-Free Device
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V(BR)DSS RDS(on) MAX 50 mW @ 4.5 V 20 V 63 mW @ 2.5 V 87 mW @ 1.8 V ID MAX 3.3 A 3.0 A 2.5 A
Applications
* DC-DC Conversion * Battery Management * Load/Power Switch
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) t 30 s t 10 s Power Dissipation (Note 1) Steady State t 10 s Pulsed Drain Current tp = 10 ms IDM TJ, Tstg IS TL TA = 25C TA = 85C TA = 25C TA = 25C PD 1.25 6.4 -55 to 150 0.65 260 A C A C ID Symbol VDSS VGS Value 20 8 3.3 2.3 4.0 0.82 W A Unit V V
SIMPLIFIED SCHEMATIC - N-CHANNEL
D
G
S
3 1 2 SOT-23 CASE 318 STYLE 21
MARKING DIAGRAM/ PIN ASSIGNMENT
3 Drain
Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s)
TRCMG G 1 1 Gate 2 Source
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
TRC = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location)
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t 30 s Junction-to-Ambient - t < 10 s (Note 1) Symbol RqJA RqJA RqJA Max 260 153 100 Unit C/W C/W C/W
ORDERING INFORMATION
Device NTR3161NT1G Package SOT-23 (Pb-Free) Shipping 3000/Tape & Reel
1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2008
June, 2008 - Rev. 0
1
Publication Order Number: NTR3161N/D
NTR3161N
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On-Resistance VGS(TH) VGS(TH) /TJ RDS(on) VGS = 4.5 V, ID = 3.3 A VGS = 2.5 V, ID = 3.0 A VGS = 1.8 V, ID = 2.5 A Forward Transconductance gFS Ciss Coss Crss QG(TOT) QG(TH) QGS QGD RG td(on) tr td(off) tf VSD tRR ta tb QRR VGS = 0 V, IS = 1.0 A, dISD/dt = 100 A/ms VGS = 0 V, IS = 1.0 A, TJ = 25C VGS = 4.5 V, VDD = 10 V, ID = 3.3 A, RG = 6 W VGS = 4.5 V, VDS = 10 V, ID = 3.3 A VGS = 0 V, f = 1.0 MHz, VDS = 10 V VDS = 5.0 V, ID = 3.3 A CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 6.7 11.6 18.6 23.2 ns 540 80 62 7.3 0.4 0.8 1.6 2.4 W nC pF VGS = VDS, ID = 250 mA 0.4 0.6 2.4 38 44 52 10.5 50 63 87 S 1.0 V mV/C mW V(BR)DSS V(BR)DSS /TJ IDSS IGSS VGS = 0 V, ID = 250 mA ID = 250 mA, Reference to 25C VGS = 0 V, VDS = 16 V, TJ = 25C VGS = 0 V, VDS = 16 V, TJ = 125C VDS = 0 V, VGS = "8 V 20 16.2 1.0 10 100 V mV/C mA nA Symbol Test Conditions Min Typ Max Units
DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge 0.65 14.7 5.2 9.5 3.3 nC 1.0 V ns
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures.
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NTR3161N
3.5 ID, DRAIN CURRENT (AMPS) 3.0 2.5 2.0 1.5 1.0 0.5 0 0.0 0.5 1.0 1.5 2.0 VGS = 1.1 V VGS = 1.3 V VGS = 1.4 V 3.0 V 4.5 V TJ = 25C VGS = 1.2 V ID, DRAIN CURRENT (AMPS) 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0.4 0.6 TJ = 125C TJ = 25C TJ = -55C 0.8 1.0 1.2 1.4 1.6 VDS 10 V
VGS = 1.0 V VGS = 0.9 V 2.5 3.0
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.10 ID = 3.3 A TJ = 25C 0.08
0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 1 2 3 4 5 6 7 VGS = 4.5 V TJ = 25C VGS = 1.8 V VGS = 2.5 V
0.06
0.04
0.02
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance versus Gate-to-Source Voltage
1.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.4 1.2 1.0 0.8 0.6 -50 ID = 3.3 A VGS = 4.5 V IDSS, LEAKAGE (nA) 10000
Figure 4. On-Resistance versus Drain Current and Gate Voltage
VGS = 0 V TJ = 150C
1000 TJ = 125C
-25
0
25
50
75
100
125
150
100
2
4
6
8
10
12
14
16
18
20
TJ, JUNCTION TEMPERATURE (C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current versus Voltage
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NTR3161N
1000 900 800 C, CAPACITANCE (pF) 700 600 500 400 300 200 100 0 0 Coss Crss 2 4 6 8 10 12 14 16 18 20 DRAIN-TO-SOURCE VOLTAGE (VOLTS) Ciss VGS = 0 V TJ = 25C VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 4.5 4.0 QT
3.5
3.0 2.5 2.0 QGS QGD
VGS
1.5 1.0 TJ = 25C ID = 3.3 A 0 1 2 3 4 5 6 7 8
0.5 0
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge
4 IS, SOURCE CURRENT (AMPS)
1000 VDD = 10 V ID = 3.3 A VGS = 4.5 V t, TIME (ns) 100
VGS = 0 V TJ = 25C 3
td(off) tf tr
2
10
td(on)
1
1
0 1 10 RG, GATE RESISTANCE (W) 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
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NTR3161N
PACKAGE DIMENSIONS
SOT-23 (TO-236) CASE 318-08 ISSUE AN
D
SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08.
E
1 2
HE c e b q 0.25
A A1 L L1 VIEW C
DIM A A1 b c D E e L L1 HE
MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10
MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64
MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083
INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094
MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104
STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN
SOLDERING FOOTPRINT
0.95 0.037 0.95 0.037
2.0 0.079 0.9 0.035
SCALE 10:1
0.8 0.031
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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NTR3161N/D

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